Taiwan Semiconductor Manufacturing Company, Ltd. Bipolar Transistors - BJT TSC5304DCP ROG

TSC5304DCP ROG is a high voltage NPN silicon transistor with an integrated anti-parallel collector-emitter diode, designed for half-bridge light ballast applications. It is packaged in a TO-252 (DPAK) case. The device has a collector-emitter voltage rating of 400 V, a collector-base voltage rating of 700 V, and a continuous collector current of 4 A. The collector-emitter saturation voltage is 1.5 V at a collector current of 4 A and base current of 1 A. The base-emitter saturation voltage is 1.2 V at a collector current of 2 A and base current of 0.5 A. Thermal resistance from junction to case is 3.57 °C/W, and the maximum operating junction temperature is +150 °C. The transistor features low base drive requirements and a narrow storage-time spread, enabling efficient anti-saturation operation.