High voltage NPN transistor with built-in free-wheeling diode in TO-251 package, rated for 400 V collector-emitter voltage and 2 A continuous collector current. Features collector-base breakdown voltage of 700 V, collector-emitter saturation voltage up to 1.5 V at 1 A collector current and 0.25 A base current, and a diode forward voltage drop of 1.4 V at 1 A. Maximum junction temperature is 150 °C with junction-to-case thermal resistance of 6.25 °C/W. Suitable for half-bridge light ballast applications. The device is halogen-free.
Bipolar Transistors - BJT High Vltg NPN Transistor w/ diode
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | TSC5302DCH |
| Product Name | Bipolar Transistors - BJT |
