Taiwan Semiconductor Manufacturing Company, Ltd. Bipolar Transistors - BJT TSC4505CX

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Bipolar Transistors - BJT NPN Transistor
Description
Bipolar Transistors - BJT NPN Transistor
Datasheet
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TSC4505CX is an NPN silicon transistor in a SOT-23 package with dimensions of 2.80 to 3.04 mm in length, 1.20 to 1.60 mm in width, and 1.00 mm in height. It has a collector-base and collector-emitter breakdown voltage of 400 V, a continuous collector current rating of 300 mA, and a power dissipation limit of 0.225 W. The transistor features a low collector-emitter saturation voltage of 0.1 V at I_C/I_B = 10 mA / 1 mA and a DC current gain (h_FE) ranging from 100 to 270 at I_C = 10 mA and V_CE = 10 V. It operates within a junction temperature range of -55 °C to +150 °C and is halogen-free. The device meets no specified industry standards beyond basic electrical ratings.

Datasheet Summary
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TSC4505CX is an NPN silicon transistor in a SOT-23 package with dimensions of 2.80 to 3.04 mm in length, 1.20 to 1.60 mm in width, and 1.00 mm in height. It has a collector-base and collector-emitter breakdown voltage of 400 V, a continuous collector current rating of 300 mA, and a power dissipation limit of 0.225 W. The transistor features a low collector-emitter saturation voltage of 0.1 V at I_C/I_B = 10 mA / 1 mA and a DC current gain (h_FE) ranging from 100 to 270 at I_C = 10 mA and V_CE = 10 V. It operates within a junction temperature range of -55 °C to +150 °C and is halogen-free. The device meets no specified industry standards beyond basic electrical ratings.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
TSC4505CX
Bipolar Transistors - BJT TSC4505CX
Bipolar Transistors - BJT NPN Transistor

Bipolar Transistors - BJT NPN Transistor

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number TSC4505CX
Product Name Bipolar Transistors - BJT
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