Taiwan Semiconductor Manufacturing Company, Ltd. Bipolar Transistors - BJT MMBT3906 RF

Description
Bipolar Transistors - BJT 0,3mW PNP Transistor
Description
Bipolar Transistors - BJT 0,3mW PNP Transistor
Datasheet
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The MMBT3906 RF is a PNP small signal transistor in an SOT-23 surface-mount package, rated for 350 mW power dissipation, with a collector-emitter voltage of -40 V, collector current of -200 mA, and a junction temperature range of -55 to +150 °C. It features matte tin lead finish, RoHS compliance, and is moisture sensitivity level 1. The device meets MIL-STD-202 for solderability and is halogen-free when marked with suffix "G". Thermal resistance is 357 °C/W. Current gain (hFE) ranges from 100 to 300 at -1 V collector-emitter voltage and -10 mA collector current. The gain-bandwidth product is 250 MHz at -20 V and -10 mA.

Datasheet Summary
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The MMBT3906 RF is a PNP small signal transistor in an SOT-23 surface-mount package, rated for 350 mW power dissipation, with a collector-emitter voltage of -40 V, collector current of -200 mA, and a junction temperature range of -55 to +150 °C. It features matte tin lead finish, RoHS compliance, and is moisture sensitivity level 1. The device meets MIL-STD-202 for solderability and is halogen-free when marked with suffix "G". Thermal resistance is 357 °C/W. Current gain (hFE) ranges from 100 to 300 at -1 V collector-emitter voltage and -10 mA collector current. The gain-bandwidth product is 250 MHz at -20 V and -10 mA.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
MMBT3906 RF
Bipolar Transistors - BJT MMBT3906 RF
Bipolar Transistors - BJT 0,3mW PNP Transistor

Bipolar Transistors - BJT 0,3mW PNP Transistor

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number MMBT3906 RF
Product Name Bipolar Transistors - BJT
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