Taiwan Semiconductor Manufacturing Company, Ltd. Bipolar Transistors - BJT BC848CW RFG

NPN silicon small signal transistors in SOT-23 surface mount packaging, rated for 200 mW power dissipation, with collector-base voltage up to 30 V, collector-emitter voltage up to 30 V, and emitter-base voltage of 5 V. collector current is 100 mA, junction and storage temperature range is -55°C to +150°C, DC current gain hFE is 420 to 800 at VCE = 5 V and IC = 2 mA, collector-emitter saturation voltage is ≤ 0.5 V, base-emitter saturation voltage is ≤ 1.1 V, and transition frequency is 100 MHz. Constructed with epitaxial planar die, RoHS compliant, halogen-free per IEC 61249-2-21, with matte tin lead finish and moisture sensitivity level 1. Solderable per MIL-STD-202, withstanding 260°C for 10 seconds.