NPN small signal transistor in SOT-23 package, rated for 200 mW power dissipation, with a collector-emitter voltage of 30 V, collector current of 100 mA, and DC current gain (hFE) between 200 and 450 at 5 V and 2 mA. Junction and storage temperature range is -55°C to +150°C. Surface mount device with matte tin lead finish, RoHS compliant, and moisture sensitivity level 1. Physical dimensions are 2.70 to 3.10 mm in length, 1.10 to 1.50 mm in width, and 0.30 to 0.51 mm in thickness.
Bipolar Transistors - BJT Transistor 200mW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC848B RF |
| Product Name | Bipolar Transistors - BJT |
