Taiwan Semiconductor Manufacturing Company, Ltd. Bipolar Transistors - BJT BC847CW RF

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Bipolar Transistors - BJT Transistor 200mW
Description
Bipolar Transistors - BJT Transistor 200mW
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BC847CW RF is an NPN small signal transistor in a SOT-23 surface mount package, rated for 200 mW power dissipation, with a collector-emitter voltage of 45 V, collector current of 100 mA, and emitter-base voltage of 6 V. It features a DC current gain (hFE) between 420 and 800 at VCE = 5 V and IC = 2 mA, and a transition frequency of 100 MHz. The device is RoHS compliant, halogen-free, and supports soldering up to 260°C for 10 seconds. The SOT-23 package measures 2.70-3.10 mm in height, 1.10-1.50 mm in width, and 0.89-1.30 mm in lead pitch. It is suitable for general-purpose switching and amplification applications and meets RoHS 2011/65/EU and WEEE 2002/96/EC directives.

Datasheet Summary
Powered by GS/AI

BC847CW RF is an NPN small signal transistor in a SOT-23 surface mount package, rated for 200 mW power dissipation, with a collector-emitter voltage of 45 V, collector current of 100 mA, and emitter-base voltage of 6 V. It features a DC current gain (hFE) between 420 and 800 at VCE = 5 V and IC = 2 mA, and a transition frequency of 100 MHz. The device is RoHS compliant, halogen-free, and supports soldering up to 260°C for 10 seconds. The SOT-23 package measures 2.70-3.10 mm in height, 1.10-1.50 mm in width, and 0.89-1.30 mm in lead pitch. It is suitable for general-purpose switching and amplification applications and meets RoHS 2011/65/EU and WEEE 2002/96/EC directives.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC847CW RF
Bipolar Transistors - BJT BC847CW RF
Bipolar Transistors - BJT Transistor 200mW

Bipolar Transistors - BJT Transistor 200mW

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC847CW RF
Product Name Bipolar Transistors - BJT
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