NPN silicon small signal transistors in SOT-23 surface mount package, rated for 200 mW power dissipation, with collector-base voltage up to 50 V, collector-emitter voltage up to 45 V, and emitter-base voltage of 6 V. Collector current is limited to 100 mA. DC current gain (hFE) ranges from 110 to 220 for the A variant. Junction and storage temperature ranges from -55°C to +150°C. The device is RoHS compliant, halogen-free, and has a matte tin lead finish with nickel underplate. Moisture sensitivity level is 1. Package dimensions are 2.70-3.10 mm in height, 1.10-1.50 mm in width, and 0.30-0.51 mm in thickness. Soldering is guaranteed up to 260°C for 10 seconds.
Bipolar Transistors - BJT Transistor 200mW
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC847AW RF |
| Product Name | Bipolar Transistors - BJT |
