Taiwan Semiconductor Manufacturing Company, Ltd. Bipolar Transistors - BJT BC550C B1G

The BC550C B1G is an NPN silicon transistor in a TO-92 package, rated for a collector-emitter voltage of 45 V, a continuous collector current of 100 mA, and a power dissipation of 500 mW. It features a DC current gain (hFE) of 420 to 800 at 2 mA collector current and 5 V collector-emitter voltage. The device meets RoHS 2011/65/EU and WEEE 2002/96/EC requirements, is halogen-free per IEC 61249-2-21, and complies with UL 94 V-0 flammability standards. Moisture sensitivity level is 1 per J-STD-020, and terminals are matte tin plated per J-STD-002. It is suitable for switching mode power supplies, adapters, lighting, and DC/DC converters.