STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - Y100NS20FD Y100NS20FD

Manufacturer: STMicroelectronics
Win Source Part Number: 214655-Y100NS20FD
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 450W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: MAX247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 360nC @ 10V
Max Input Capacitance: 7900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

MOSFET N-CH 200V 100A MAX247 Product overview: Y100NS20FD from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 100A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-Y100NS20FD can be used for catalog matching and distributor lookup.