STMicroelectronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - W13NK80Z W13NK80Z

Description
Manufacturer: STMicroelectronics Win Source Part Number: 054235-W13NK80Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 3480pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - W13NK80Z - 054235-W13NK80Z - Win Source Electronics
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 054235-W13NK80Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 3480pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - W13NK80Z - 054235-W13NK80Z - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - W13NK80Z
054235-W13NK80Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - W13NK80Z 054235-W13NK80Z
Manufacturer: STMicroelectronics Win Source Part Number: 054235-W13NK80Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 12A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 3480pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 054235-W13NK80Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 3480pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 054235-W13NK80Z
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - W13NK80Z
Polarity N-Channel; N-Channel
V(BR)DSS 800 volts
PD 230000 milliwatts
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