STMicroelectronics, Inc. MOSFET VNP10N06-E

The VNP10N06-E is a monolithic fully autoprotected N-channel MOSFET in a standard TO-220 package, designed for DC to 50 kHz switching applications. It integrates current limitation, thermal shutdown, overvoltage clamp, and ESD protection. The device has a drain-source voltage rating of 60 V, a maximum drain current of 10 A, and a static drain-source on-resistance of 0.3 Ω at 25 °C. Thermal resistance junction-to-case is 3 °C/W, and junction temperature is internally limited. It meets the VIPower Technology architecture and is rated for storage temperatures from -55 to 150 °C. The TO-220 package dimensions are 15.25 to 15.75 mm in length, 10 to 10.40 mm in width, and 13 to 14 mm in lead length.