STMicroelectronics, Inc. Bipolar Transistor Arrays ULN2802A

Description
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays - 497-2355-5-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
497-2355-5-ND
Bipolar Transistor Arrays 497-2355-5-ND
Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP

Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 2.25W Through Hole 18-DIP

Buy Now Datasheet
Bipolar Transistor Arrays - ULN2802A - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
ULN2802A
Bipolar Transistor Arrays ULN2802A
TRANS 8NPN DARL 50V 0.5A 18DIP

TRANS 8NPN DARL 50V 0.5A 18DIP

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays - ULN2802A - 1116377-ULN2802A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - ULN2802A
1116377-ULN2802A
TRANSISTORS - Transistors (BJT) - Arrays - ULN2802A 1116377-ULN2802A
Manufacturer: STMicroelectronics Win Source Part Number: 1116377-ULN2802A Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: 8 NPN Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -20°C to 150°C (TJ) Case / Package: 18-DIP Maximum Current Collector: 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.6V @ 500μA, 350mA Typical Gain (hFE) (Min): 1000 @ 350mA, 2V Maximum Power Dissipation: 2.25W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

Manufacturer: STMicroelectronics
Win Source Part Number: 1116377-ULN2802A
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: 8 NPN Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -20°C to 150°C (TJ)
Case / Package: 18-DIP
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min): 1000 @ 350mA, 2V
Maximum Power Dissipation: 2.25W
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

Buy Now Datasheet
Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 2.25 W, 500 Ma, 1000, Dip Rohs Compliant Stmicroelectronics - 34X5258 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 2.25 W, 500 Ma, 1000, Dip Rohs Compliant Stmicroelectronics
34X5258
Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 2.25 W, 500 Ma, 1000, Dip Rohs Compliant Stmicroelectronics 34X5258
Bipolar (BJT) Array Transistor, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000, DIP RoHS Compliant: Yes

Bipolar (BJT) Array Transistor, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000, DIP RoHS Compliant: Yes

Supplier's Site Datasheet
STMICROELECTRONICS - ULN2802A - Bipolares (BJT) Transistor-Array, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18 - 761-ULN2802A - Utmel Electronic Limited
Hong Kong, China
STMICROELECTRONICS - ULN2802A - Bipolares (BJT) Transistor-Array, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18
761-ULN2802A
STMICROELECTRONICS - ULN2802A - Bipolares (BJT) Transistor-Array, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18 761-ULN2802A
STMICROELECTRONICS - ULN2802A - Bipolares (BJT) Transistor-Array, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18

STMICROELECTRONICS - ULN2802A - Bipolares (BJT) Transistor-Array, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - ULN2802A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
ULN2802A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) ULN2802A
TRANS 8NPN DARL 50V 0.5A 18DIP

TRANS 8NPN DARL 50V 0.5A 18DIP

Supplier's Site
Sheung Wan, Hong Kong
Darlington Transistors
ULN2802A
Darlington Transistors ULN2802A
Darlington Transistors Eight NPN Array

Darlington Transistors Eight NPN Array

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Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Darlington Transistors
Product Number 497-2355-5-ND ULN2802A 1116377-ULN2802A 34X5258 761-ULN2802A ULN2802A ULN2802A
Product Name Bipolar Transistor Arrays Bipolar Transistor Arrays TRANSISTORS - Transistors (BJT) - Arrays - ULN2802A Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 2.25 W, 500 Ma, 1000, Dip Rohs Compliant Stmicroelectronics STMICROELECTRONICS - ULN2802A - Bipolares (BJT) Transistor-Array, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18 Discrete Semiconductor Products - Transistors - Bipolar (BJT) Darlington Transistors
Polarity NPN 8 NPN Darlington; NPN NPN; 8 NPN Darlington NPN NPN; NPN
Package Type "18-DIP (0.300"", 7.62mm)" 18-DIP (0.300", 7.62mm) SOT3; 18-DIP TO-3
IC(max) 500 milliamps 500 milliamps 500 milliamps
VCEO 50 volts 50 volts 50 volts
Output Power 2.25 watts
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