STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY80NM60N STY80NM60N

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1104078-STY80NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 447W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: MAX247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 74A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 360nC @ 10V Max Input Capacitance: 10100pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 35 mOhm @ 37A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 30
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1104078-STY80NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 447W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: MAX247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 74A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 360nC @ 10V Max Input Capacitance: 10100pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 35 mOhm @ 37A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 30
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY80NM60N - 1104078-STY80NM60N - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY80NM60N
1104078-STY80NM60N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY80NM60N 1104078-STY80NM60N
Manufacturer: STMicroelectronics Win Source Part Number: 1104078-STY80NM60N Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 447W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: MAX247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 74A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 360nC @ 10V Max Input Capacitance: 10100pF @ 50V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 35 mOhm @ 37A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 30

Manufacturer: STMicroelectronics
Win Source Part Number: 1104078-STY80NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 447W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: MAX247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 74A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 360nC @ 10V
Max Input Capacitance: 10100pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 35 mOhm @ 37A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 30

Buy Now Datasheet
Single FETs, MOSFETs - 497-8466-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-8466-5-ND
Single FETs, MOSFETs 497-8466-5-ND
N-Channel 600V 74A (Tc) 447W (Tc) Through Hole MAX247™

N-Channel 600V 74A (Tc) 447W (Tc) Through Hole MAX247™

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STY80NM60N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STY80NM60N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STY80NM60N
MOSFET N-CH 600V 74A MAX247

MOSFET N-CH 600V 74A MAX247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1104078-STY80NM60N 497-8466-5-ND STY80NM60N
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY80NM60N Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 447000 milliwatts
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