STMicroelectronics, Inc. 600V 74A MOSFET Transistor STY80NM60N

600V 74A N-CH MOSFET TO-247 35mR RdsOn Product overview: STY80NM60N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 74A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 74A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STY80NM60N can be used for catalog matching and distributor lookup.

Manufacturer: STMicroelectronics
Win Source Part Number: 1104078-STY80NM60N
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 447W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: MAX247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 74A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 360nC @ 10V
Max Input Capacitance: 10100pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 35 mOhm @ 37A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 30

N-Channel 600V 74A (Tc) 447W (Tc) Through Hole MAX247™