STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY60NM50 STY60NM50

Description
Manufacturer: STMicroelectronics Win Source Part Number: 349036-STY60NM50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: MAX247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 266nC @ 10V Max Input Capacitance: 7500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 50 mOhm @ 30A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY60NM50 - 349036-STY60NM50 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-2775-5-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - STY60NM50 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 16478081 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STY60NM50 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 60 A, 500 V, 50 Mohm, 10 V, 4 V Rohs Compliant Stmicroelectronics - 24M7999 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 349036-STY60NM50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: MAX247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 266nC @ 10V Max Input Capacitance: 7500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 50 mOhm @ 30A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY60NM50 - 349036-STY60NM50 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY60NM50
349036-STY60NM50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY60NM50 349036-STY60NM50
Manufacturer: STMicroelectronics Win Source Part Number: 349036-STY60NM50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: MAX247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 266nC @ 10V Max Input Capacitance: 7500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 50 mOhm @ 30A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 349036-STY60NM50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 560W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: MAX247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 266nC @ 10V
Max Input Capacitance: 7500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 50 mOhm @ 30A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 500V 60A MOSFET Transistor
278-STY60NM50
N-Channel 500V 60A MOSFET Transistor 278-STY60NM50
500V 60A N-Channel MOSFET TO-247 50mR Power Transistor Product overview: STY60NM50 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STY60NM50 can be used for catalog matching and distributor lookup.

500V 60A N-Channel MOSFET TO-247 50mR Power Transistor Product overview: STY60NM50 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STY60NM50 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - 497-2775-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-2775-5-ND
Single FETs, MOSFETs 497-2775-5-ND
N-Channel 500V 60A (Tc) 560W (Tc) Through Hole MAX247™

N-Channel 500V 60A (Tc) 560W (Tc) Through Hole MAX247™

Buy Now Datasheet
Single FETs, MOSFETs - STY60NM50 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STY60NM50
Single FETs, MOSFETs STY60NM50
MOSFET N-CH 500V 60A MAX247

MOSFET N-CH 500V 60A MAX247

Supplier's Site Datasheet
Transistor - 16478081 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
16478081
Transistor 16478081
N CHANNEL MOSFET, 500V, 60A, MAX247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:60A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY

N CHANNEL MOSFET, 500V, 60A, MAX247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:60A; DRAIN SOURCE VOLTAGE VDS:500V; ON RESISTANCE RDS(. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STY60NM50
MOSFET STY60NM50
MOSFET N-Ch 500 Volt 60 Amp

MOSFET N-Ch 500 Volt 60 Amp

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STY60NM50 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STY60NM50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STY60NM50
MOSFET N-CH 500V 60A MAX247

MOSFET N-CH 500V 60A MAX247

Supplier's Site
Mosfet Transistor, N Channel, 60 A, 500 V, 50 Mohm, 10 V, 4 V Rohs Compliant Stmicroelectronics - 24M7999 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 60 A, 500 V, 50 Mohm, 10 V, 4 V Rohs Compliant Stmicroelectronics
24M7999
Mosfet Transistor, N Channel, 60 A, 500 V, 50 Mohm, 10 V, 4 V Rohs Compliant Stmicroelectronics 24M7999
MOSFET Transistor, N Channel, 60 A, 500 V, 50 mohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 60 A, 500 V, 50 mohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Radwell International VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 349036-STY60NM50 278-STY60NM50 497-2775-5-ND STY60NM50 16478081 STY60NM50 STY60NM50 24M7999
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY60NM50 N-Channel 500V 60A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 60 A, 500 V, 50 Mohm, 10 V, 4 V Rohs Compliant Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 560000 milliwatts 560000 milliwatts 560000 milliwatts
TJ 150 C (302 F) -65 C (-85 F) 150 C (302 F)
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