STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY34NB50 STY34NB50

Description
Manufacturer: STMicroelectronics Win Source Part Number: 054067-STY34NB50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 450W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: MAX247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 34A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 223nC @ 10V Max Input Capacitance: 9100pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 130 mOhm @ 17A, 10V Alternative Parts (Cross-Reference): IXFK44N50F; STY34NB50F; STU26NM50I; Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 054067-STY34NB50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 450W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: MAX247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 34A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 223nC @ 10V Max Input Capacitance: 9100pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 130 mOhm @ 17A, 10V Alternative Parts (Cross-Reference): IXFK44N50F; STY34NB50F; STU26NM50I; Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY34NB50 - 054067-STY34NB50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY34NB50
054067-STY34NB50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY34NB50 054067-STY34NB50
Manufacturer: STMicroelectronics Win Source Part Number: 054067-STY34NB50 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 450W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: MAX247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 34A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 223nC @ 10V Max Input Capacitance: 9100pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 130 mOhm @ 17A, 10V Alternative Parts (Cross-Reference): IXFK44N50F; STY34NB50F; STU26NM50I; Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 054067-STY34NB50
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 450W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: MAX247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 34A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 223nC @ 10V
Max Input Capacitance: 9100pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 130 mOhm @ 17A, 10V
Alternative Parts (Cross-Reference): IXFK44N50F; STY34NB50F; STU26NM50I;
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-2680-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-2680-5-ND
Single FETs, MOSFETs 497-2680-5-ND
N-Channel 500V 34A (Tc) 450W (Tc) Through Hole MAX247™

N-Channel 500V 34A (Tc) 450W (Tc) Through Hole MAX247™

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STY34NB50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STY34NB50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STY34NB50
MOSFET N-CH 500V 34A MAX247

MOSFET N-CH 500V 34A MAX247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 054067-STY34NB50 497-2680-5-ND STY34NB50
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STY34NB50 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts
PD 450000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 94-2110-ND - DigiKey
Infineon Technologies AG
Specs
Polarity N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
View Details
2 suppliers
0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor - TGF3015-SM - Qorvo
Specs
Transistor Technology / Material 0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor
Transistor Grade / Operating Range Military
Package Type QFN
View Details
3 suppliers