STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STY105NM50N

Description
Win Source Part Number: 1097056-STY105NM50N Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ II Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 625W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: MAX247™ Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STY100NM60N; STWA88N65M5; FCH072N60F; SIHG73N60E-GE3; IRFPS40N60KPBF; STY60NM60STY105NM50N .; ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13290-5 Base Product Number: STY105 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1097056-STY105NM50N - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-13290-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STY105NM50N - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 500V, 110A, Max-247; Channel Type Stmicroelectronics - 45AC7798 - Newark, An Avnet Company
    Newark, An Avnet Company
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Description
Win Source Part Number: 1097056-STY105NM50N Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ II Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 625W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: MAX247™ Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STY100NM60N; STWA88N65M5; FCH072N60F; SIHG73N60E-GE3; IRFPS40N60KPBF; STY60NM60STY105NM50N .; ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13290-5 Base Product Number: STY105 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1097056-STY105NM50N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1097056-STY105NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1097056-STY105NM50N
Win Source Part Number: 1097056-STY105NM50N Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ II Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 625W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: MAX247™ Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STY100NM60N; STWA88N65M5; FCH072N60F; SIHG73N60E-GE3; IRFPS40N60KPBF; STY60NM60STY105NM50N .; ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13290-5 Base Product Number: STY105 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1097056-STY105NM50N
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ II
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 625W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: MAX247™
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STY100NM60N; STWA88N65M5; FCH072N60F; SIHG73N60E-GE3; IRFPS40N60KPBF; STY60NM60STY105NM50N.;
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-13290-5
Base Product Number: STY105
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 497-13290-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13290-5-ND
Single FETs, MOSFETs 497-13290-5-ND
N-Channel 500V 110A (Tc) 625W (Tc) Through Hole MAX247™

N-Channel 500V 110A (Tc) 625W (Tc) Through Hole MAX247™

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STY105NM50N - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STY105NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STY105NM50N
MOSFET N-CH 500V 110A MAX247

MOSFET N-CH 500V 110A MAX247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STY105NM50N
MOSFET STY105NM50N
MOSFET N-Ch 500V 0.018 Ohm 110A Mdmesh II FET

MOSFET N-Ch 500V 0.018 Ohm 110A Mdmesh II FET

Buy Now Datasheet
Mosfet, N-Ch, 500V, 110A, Max-247; Channel Type Stmicroelectronics - 45AC7798 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 110A, Max-247; Channel Type Stmicroelectronics
45AC7798
Mosfet, N-Ch, 500V, 110A, Max-247; Channel Type Stmicroelectronics 45AC7798
MOSFET, N-CH, 500V, 110A, MAX-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 500V, 110A, MAX-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1097056-STY105NM50N 497-13290-5-ND STY105NM50N STY105NM50N 45AC7798
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 500V, 110A, Max-247; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel
PD 625000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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