STMicroelectronics, Inc. Single FETs, MOSFETs STY105NM50N

Description
N-Channel 500V 110A (Tc) 625W (Tc) Through Hole MAX247™
Request a Quote Datasheet
Description
N-Channel 500V 110A (Tc) 625W (Tc) Through Hole MAX247™
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-13290-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13290-5-ND
Single FETs, MOSFETs 497-13290-5-ND
N-Channel 500V 110A (Tc) 625W (Tc) Through Hole MAX247™

N-Channel 500V 110A (Tc) 625W (Tc) Through Hole MAX247™

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1097056-STY105NM50N - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1097056-STY105NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1097056-STY105NM50N
Win Source Part Number: 1097056-STY105NM50N Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ II Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 625W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: MAX247™ Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STY100NM60N; STWA88N65M5; FCH072N60F; SIHG73N60E-GE3; IRFPS40N60KPBF; STY60NM60STY105NM50N .; ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13290-5 Base Product Number: STY105 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1097056-STY105NM50N
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ II
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 625W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: MAX247™
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STY100NM60N; STWA88N65M5; FCH072N60F; SIHG73N60E-GE3; IRFPS40N60KPBF; STY60NM60STY105NM50N.;
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-13290-5
Base Product Number: STY105
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STY105NM50N - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STY105NM50N
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STY105NM50N
MOSFET N-CH 500V 110A MAX247

MOSFET N-CH 500V 110A MAX247

Supplier's Site
Mosfet, N-Ch, 500V, 110A, Max-247; Channel Type Stmicroelectronics - 45AC7798 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 110A, Max-247; Channel Type Stmicroelectronics
45AC7798
Mosfet, N-Ch, 500V, 110A, Max-247; Channel Type Stmicroelectronics 45AC7798
MOSFET, N-CH, 500V, 110A, MAX-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 500V, 110A, MAX-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 500V 0.018 Ohm 110A Mdmesh II FET

MOSFET N-Ch 500V 0.018 Ohm 110A Mdmesh II FET

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-13290-5-ND 1097056-STY105NM50N STY105NM50N 45AC7798 STY105NM50N
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 500V, 110A, Max-247; Channel Type Stmicroelectronics MOSFET
Polarity N-Channel N-Channel
Package Type TO-247; TO-247-3 SOT3 TO-247; TO-247-3 TO-3
PD 625000 milliwatts
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