Win Source Part Number: 1097056-STY105NM50N
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ II
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 625W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: MAX247™
Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STY100NM60N; STWA88N65M5; FCH072N60F; SIHG73N60E-GE3; IRFPS40N60KPBF; STY60NM60STY105NM50N
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-13290-5
Base Product Number: STY105
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 500V 110A (Tc) 625W (Tc) Through Hole MAX247™
N-channel 500 V, 0.018 Ohm typ., 110 A MDmesh II Power MOSFET in Max247 package Product overview: STY105NM50N from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 500 V, 0.018 Ohm, 110 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500 V, 0.018 Ohm, 110 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STY105NM50N can be used for catalog matching and distributor lookup.
MOSFET N-CH 500V 110A MAX247
MOSFET N-Ch 500V 0.018 Ohm 110A Mdmesh II FET
MOSFET, N-CH, 500V, 110A, MAX-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:110A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1097056-STY105NM50N | 497-13290-5-ND | 278-STY105NM50N | STY105NM50N | STY105NM50N | 45AC7798 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | N-Channel 500 V 0.018 Ohm 110 A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 500V, 110A, Max-247; Channel Type Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| PD | 625000 milliwatts | 625000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
