STMicroelectronics, Inc. Single Bipolar Transistors STX112

Description
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 1.2W Through Hole TO-92-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 1.2W Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - STX112-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
STX112-ND
Single Bipolar Transistors STX112-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 1.2W Through Hole TO-92-3

Bipolar (BJT) Transistor NPN - Darlington 100V 2A 1.2W Through Hole TO-92-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1278617-STX112 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1278617-STX112
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1278617-STX112
Win Source Part Number: 1278617-STX112 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 2,500 Power - Max: 1.2 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STX112 Product Status: Obsolete

Win Source Part Number: 1278617-STX112
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 2,500
Power - Max: 1.2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STX112
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - STX112 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
STX112
Discrete Semiconductor Products - Transistors - Bipolar (BJT) STX112
TRANS NPN DARL 100V 2A TO92-3

TRANS NPN DARL 100V 2A TO92-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number STX112-ND 1278617-STX112 STX112
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
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