STMicroelectronics, Inc. Single FETs, MOSFETs STWA70N65DM6

N-Channel 650V 68A (Tc) 450W (Tc) Through Hole TO-247 Long Leads

N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long leads package Product overview: STWA70N65DM6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 36 mOhm, 68 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 36 mOhm, 68 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STWA70N65DM6 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1278107-STWA70N65DM6
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ DM6
Package: Tube
Standard Package: 600
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 450W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-STWA70N65DM6,-1138-STWA70N65DM6
Base Product Number: STWA70
Drive Voltage (Max Rds On, Min Rds On): 10V