STMicroelectronics, Inc. Single FETs, MOSFETs STWA68N60M6

Description
N-Channel 600V 63A (Tc) 390W (Tc) Through Hole TO-247 Long Leads
Request a Quote Datasheet
Description
N-Channel 600V 63A (Tc) 390W (Tc) Through Hole TO-247 Long Leads
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-18501-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-18501-ND
Single FETs, MOSFETs 497-18501-ND
N-Channel 600V 63A (Tc) 390W (Tc) Through Hole TO-247 Long Leads

N-Channel 600V 63A (Tc) 390W (Tc) Through Hole TO-247 Long Leads

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1341665-STWA68N60M6 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1341665-STWA68N60M6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1341665-STWA68N60M6
Win Source Part Number: 1341665-STWA68N60M6 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: MDmesh™ M6 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Power Dissipation (Max): 390W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247 Long Leads Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 39 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STWA68 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 31.5A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V

Win Source Part Number: 1341665-STWA68N60M6
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: MDmesh™ M6
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Power Dissipation (Max): 390W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 39 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STWA68
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 31.5A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 100 V

Buy Now Datasheet
Mosfet, N-Ch, 600V, 63A, To-247; Transistor Polarity Stmicroelectronics - 99AC9651 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 63A, To-247; Transistor Polarity Stmicroelectronics
99AC9651
Mosfet, N-Ch, 600V, 63A, To-247; Transistor Polarity Stmicroelectronics 99AC9651
MOSFET, N-CH, 600V, 63A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 600V, 63A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STWA68N60M6 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STWA68N60M6
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STWA68N60M6
MOSFET N-CH 600V 63A TO247

MOSFET N-CH 600V 63A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET

MOSFET

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Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-18501-ND 1341665-STWA68N60M6 99AC9651 STWA68N60M6 STWA68N60M6
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Mosfet, N-Ch, 600V, 63A, To-247; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3 TO-3; TO-247 TO-247; TO-247-3
PD 390000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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