The N-channel MOSFET, part number STW65N60DM6, is designed for high-voltage applications with a maximum drain-source voltage of 600V and a continuous drain current rating of 38A. It features a low on-resistance of 71 mOc at a gate-source voltage of 10V, which contributes to improved efficiency in power conversion applications. The device is capable of handling a total power dissipation of 250W and is avalanche rated, ensuring reliability under transient conditions. This MOSFET is part of the MDmesh,Ñ¢ DM6 series, known for its fast-recovery body diode and low gate charge characteristics, making it suitable for demanding switching applications such as high-efficiency bridge topologies and zero-voltage switching (ZVS) converters. The device also exhibits excellent dv/dt ruggedness and is zener-protected, enhancing its robustness in various operating environments. The operating junction temperature range is from -55¬8C to 150¬8C, and it is packaged in a TO-247 format, facilitating easy integration into existing designs.
Manufacturer: STMicroelectronics
Win Source Part Number: 1324669-STWA65N60DM6
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 600
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Supplier Device Package: TO-247 Long Leads
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 68
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 497-18316,-1138-STWA
Base Product Number: STWA65
Moisture Sensitivity Level (MSL): 1 (Unlimited)
N-Channel 600V 38A (Tc) Through Hole TO-247 Long Leads
MOSFET N-CH 600V 38A TO247
MOSFET, N-CH, 600V, 38A, 250W, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 38A TO247
MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 long leads package
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1324669-STWA65N60DM6 | 497-18316-ND | STWA65N60DM6 | 99AC0618 | STWA65N60DM6 | STWA65N60DM6 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 38A, 250W, To-247; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | TO-247; TO-247-3 | |
| Packing Method | Tube; Tube | Tube; Tube | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
