Win Source Part Number: 1278038-STWA45N65M5
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ V
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 210W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-13596-5,-497-135
Base Product Number: STWA45
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 35A (Tc) 210W (Tc) Through Hole TO-247
MOSFET N-CH 650V 35A TO247
MOSFET, N-CH, 650V, 35A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.067ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 650V 35A TO247
MOSFET N-Ch 650 V 0.067 Ohm 35 A MDmesh(TM)
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1278038-STWA45N65M5 | 497-13596-5-ND | STWA45N65M5 | 61AC2143 | STWA45N65M5 | STWA45N65M5 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 35A, To-247; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | 3470 pF @ 100 V | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 650 volts | |||||
| IDSS | 35000 milliamps | 35000 milliamps |
