STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW8NK80Z STW8NK80Z

Description
Manufacturer: STMicroelectronics Win Source Part Number: 054065-STW8NK80Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1320pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 3.1A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW8NK80Z - 054065-STW8NK80Z - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - STW8NK80Z - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Transistor - 38979750 - Radwell International
    Radwell International
  • Single FETs, MOSFETs - 497-STW8NK80Z-ND - DigiKey
    DigiKey
  • Mosfet, N, To-247; Channel Type Stmicroelectronics - 26M3825 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW8NK80Z - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: STMicroelectronics Win Source Part Number: 054065-STW8NK80Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1320pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 3.1A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW8NK80Z - 054065-STW8NK80Z - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW8NK80Z
054065-STW8NK80Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW8NK80Z 054065-STW8NK80Z
Manufacturer: STMicroelectronics Win Source Part Number: 054065-STW8NK80Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1320pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 3.1A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 054065-STW8NK80Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6.2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 1320pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STW8NK80Z - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW8NK80Z
Single FETs, MOSFETs STW8NK80Z
MOSFET N-CH 800V 6.2A TO247-3

MOSFET N-CH 800V 6.2A TO247-3

Supplier's Site Datasheet
Transistor - 38979750 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
38979750
Transistor 38979750
TRANSISTOR, MOSFET, TO-247, 10 V. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, MOSFET, TO-247, 10 V. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - 497-STW8NK80Z-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STW8NK80Z-ND
Single FETs, MOSFETs 497-STW8NK80Z-ND
MOSFET N-CH 800V 6.2A TO247-3

MOSFET N-CH 800V 6.2A TO247-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STW8NK80Z
MOSFET STW8NK80Z
MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH

MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH

Buy Now Datasheet
Mosfet, N, To-247; Channel Type Stmicroelectronics - 26M3825 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-247; Channel Type Stmicroelectronics
26M3825
Mosfet, N, To-247; Channel Type Stmicroelectronics 26M3825
MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:140W RoHS Compliant: Yes

MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:140W RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW8NK80Z - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW8NK80Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW8NK80Z
MOSFET N-CH 800V 6.2A TO247-3

MOSFET N-CH 800V 6.2A TO247-3

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) Radwell International DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 054065-STW8NK80Z STW8NK80Z 38979750 497-STW8NK80Z-ND STW8NK80Z 26M3825 STW8NK80Z
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW8NK80Z Single FETs, MOSFETs Transistor Single FETs, MOSFETs MOSFET Mosfet, N, To-247; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 800 volts 800 volts
PD 140000 milliwatts 140000 milliwatts 140000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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