STMicroelectronics, Inc. Single FETs, MOSFETs STW8NK80Z

Description
MOSFET N-CH 800V 6.2A TO247-3
Request a Quote Datasheet
Description
MOSFET N-CH 800V 6.2A TO247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-STW8NK80Z-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STW8NK80Z-ND
Single FETs, MOSFETs 497-STW8NK80Z-ND
MOSFET N-CH 800V 6.2A TO247-3

MOSFET N-CH 800V 6.2A TO247-3

Buy Now Datasheet
Transistor - 38979750 - Radwell International
Willingboro, NJ, United States
Transistor
38979750
Transistor 38979750
TRANSISTOR, MOSFET, TO-247, 10 V. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, MOSFET, TO-247, 10 V. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW8NK80Z - 054065-STW8NK80Z - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW8NK80Z
054065-STW8NK80Z
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW8NK80Z 054065-STW8NK80Z
Manufacturer: STMicroelectronics Win Source Part Number: 054065-STW8NK80Z Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 140W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 100μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 1320pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 3.1A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 054065-STW8NK80Z
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 140W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6.2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 1320pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STW8NK80Z - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW8NK80Z
Single FETs, MOSFETs STW8NK80Z
MOSFET N-CH 800V 6.2A TO247-3

MOSFET N-CH 800V 6.2A TO247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW8NK80Z - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW8NK80Z
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW8NK80Z
MOSFET N-CH 800V 6.2A TO247-3

MOSFET N-CH 800V 6.2A TO247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH

MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH

Buy Now Datasheet
Mosfet, N, To-247; Channel Type Stmicroelectronics - 26M3825 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N, To-247; Channel Type Stmicroelectronics
26M3825
Mosfet, N, To-247; Channel Type Stmicroelectronics 26M3825
MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:140W RoHS Compliant: Yes

MOSFET, N, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:6.2A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:140W RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Radwell International Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 497-STW8NK80Z-ND 38979750 054065-STW8NK80Z STW8NK80Z STW8NK80Z STW8NK80Z 26M3825
Product Name Single FETs, MOSFETs Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW8NK80Z Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N, To-247; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
V(BR)DSS 800 volts 800 volts
PD 140000 milliwatts 140000 milliwatts 140000 milliwatts
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