N-Channel 900V 8A (Tc) 130W (Tc) Through Hole TO-247-3
Manufacturer: STMicroelectronics
Win Source Part Number: 935701-STW8N90K5
Series: MDmesh™ K5
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 900 V 8A (Tc) 130W (Tc) Through Hole TO-247-3
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: STW8N90
Categories: Discrete Semiconductor Products
Case / Package: TO-247-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 30
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 900V 8A TO247-3
MOSFET N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package
MOSFET, N-CH, 900V, 8A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 900V 8A TO247-3
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-17085-ND | 935701-STW8N90K5 | STW8N90K5 | STW8N90K5 | 14AC7568 | STW8N90K5 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW8N90K5 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 900V, 8A, To-247-3; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-247; TO-247-3 | TO-247; SOT3; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | TO-247; TO-247-3 | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 900 volts |