STMicroelectronics, Inc. Single FETs, MOSFETs STW80NE06-10

Description
N-Channel 60V 80A (Tc) 250W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 60V 80A (Tc) 250W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-2790-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-2790-5-ND
Single FETs, MOSFETs 497-2790-5-ND
N-Channel 60V 80A (Tc) 250W (Tc) Through Hole TO-247-3

N-Channel 60V 80A (Tc) 250W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Singapore
N-Channel 80A 60V 0.01ohm MOSFET Transistor
278-STW80NE06-10
N-Channel 80A 60V 0.01ohm MOSFET Transistor 278-STW80NE06-10
80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Product overview: STW80NE06-10 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80A, 60V, 0.01ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80A, 60V, 0.01ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW80NE06-10 can be used for catalog matching and distributor lookup.

80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN Product overview: STW80NE06-10 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80A, 60V, 0.01ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80A, 60V, 0.01ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW80NE06-10 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW80NE06-10 - 054063-STW80NE06-10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW80NE06-10
054063-STW80NE06-10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW80NE06-10 054063-STW80NE06-10
Manufacturer: STMicroelectronics Win Source Part Number: 054063-STW80NE06-10 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: TO-247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 189nC @ 10V Max Input Capacitance: 7600pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 054063-STW80NE06-10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 189nC @ 10V
Max Input Capacitance: 7600pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW80NE06-10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW80NE06-10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW80NE06-10
MOSFET N-CH 60V 80A TO247-3

MOSFET N-CH 60V 80A TO247-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-2790-5-ND 278-STW80NE06-10 054063-STW80NE06-10 STW80NE06-10
Product Name Single FETs, MOSFETs N-Channel 80A 60V 0.01ohm MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW80NE06-10 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; SOT3; TO-247-3 TO-247; TO-247-3
PD 250000 milliwatts 250000 milliwatts
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