650V 69A N-CH MOSFET TO-247, 38mR Rds(on) Product overview: STW77N65M5 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 69A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 69A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW77N65M5 can be used for catalog matching and distributor lookup.
MOSFET N-CH 650V 69A TO247-3
N-Channel 650V 69A (Tc) 400W (Tc) Through Hole TO-247-3
Manufacturer: STMicroelectronics
Win Source Part Number: 086634-STW77N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Family Name: STW77N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 69A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 9800pF @ 100V
Maximum Gate-Source Voltage: 25V
Maximum Rds On at Id,Vgs: 38 mOhm @ 34.5A, 10V
Alternative Parts (Cross-Reference): IXKK94N60C3; APT70SM70B; IPW60R075CPA;
Introduction Date: January 20, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance
MOSFET N-CH 650V 69A TO247-3
MOSFET N-channel 650 V 0.033ohm 69A Mdmesh
MOSFET, N CH, 650V, 69A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:69A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-STW77N65M5 | STW77N65M5 | 497-10589-5-ND | 086634-STW77N65M5 | STW77N65M5 | STW77N65M5 | 55R7030 |
| Product Name | 650V 69A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW77N65M5 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Ch, 650V, 69A, To-247; Channel Type Stmicroelectronics |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 400000 milliwatts | 400000 milliwatts | 400000 milliwatts | ||||
| TJ | -55 C (-67 F) | 150 C (302 F) | 150 C (302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |