STMicroelectronics, Inc. N-Channel 600 V 32 mOhm 72 A MOSFET Transistor STW75N60M6-4

N-channel 600 V, 32 mOhm typ., 72 A MDmesh M6 Power MOSFET in a TO247-4 package Product overview: STW75N60M6-4 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 32 mOhm, 72 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 32 mOhm, 72 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW75N60M6-4 can be used for catalog matching and distributor lookup.

N-Channel 600V 72A (Tc) 446W (Tc) Through Hole TO-247-4

MOSFET N-CH 600V 72A TO247-4

Win Source Part Number: 987754-STW75N60M6-4
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ M6
Package: Tube
Standard Package: 600
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 36A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 446W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-4
Supplier Device Package: TO-247-4
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-18500,-1138-STW75N60M6-4
Base Product Number: STW75
Drive Voltage (Max Rds On, Min Rds On): 10V