Manufacturer: STMicroelectronics
Win Source Part Number: 1003990-STW72N60DM2A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 446W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 66A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 121nC @ 10V
Max Input Capacitance: 5508pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 42 mOhm @ 33A, 10V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 600V 66A TO247
N-Channel 600V 66A (Tc) 446W (Tc) Through Hole TO-247-3
Automotive-grade N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Product overview: STW72N60DM2AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 600 V, 37 mOhm, 66 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 600 V, 37 mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW72N60DM2AG can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 66A TO247
MOSFET Automotive-grade N-channel 600 V, 0.037 Ohm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1003990-STW72N60DM2AG | STW72N60DM2AG | 497-16130-5-ND | 278-STW72N60DM2AG | STW72N60DM2AG | STW72N60DM2AG |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW72N60DM2AG | Single FETs, MOSFETs | Single FETs, MOSFETs | Automotive N-Channel 600 V 37 mOhm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | ||||
| PD | 446000 milliwatts | 446000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-247; SOT3; TO-247 | TO-247; TO-247-3 | TO-247; TO-247-3 | 10V |