STMicroelectronics, Inc. Single FETs, MOSFETs STW70N65DM6

N-Channel 650V 68A (Tc) 450W (Tc) Through Hole TO-247-3

MOSFET N-CH 650V 68A TO247

N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 package Product overview: STW70N65DM6 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 36 mOhm, 68 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 36 mOhm, 68 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW70N65DM6 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1355951-STW70N65DM6
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
Mfr: STMicroelectronics
Series: MDmesh™ DM6
Package: Tube
Product Status: Active
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Base Product Number: STW70
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 100 V
Power Dissipation (Max): 450W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

STW70N65DM6, MOSFET

STW70N65DM6, MOSFET

STW70N65DM6, MOSFET