600V 68A N-CH MOSFET TO-247 30mR RdsOn Product overview: STW70N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 68A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 68A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW70N60M2 can be used for catalog matching and distributor lookup.
Manufacturer: STMicroelectronics
Win Source Part Number: 1262391-STW70N60M2
Series: MDmesh II Plus
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Family Name: STW70N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 118nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5200pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 450W (Tc)
Rds On (Maximum) @ Id, Vgs: 40 mOhm @ 34A, 10V
Alternative Parts (Cross-Reference): IPW60R075CPA; IXKK85N60CSN; TK62N60W(S1VF,S);
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
N-Channel 600V 68A (Tc) 450W (Tc) Through Hole TO-247
MOSFET N-CH 600V 68A TO247
MOSFET, N-CH, 600V, 68A, 150DEG C, 450W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:68A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 600V 0.031Ohm typ. 68A MDmesh M2
MOSFET N-CH 600V 68A TO247
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STW70N60M2 | 1262391-STW70N60M2 | 497-14226-5-ND | STW70N60M2 | 98Y2508 | STW70N60M2 | STW70N60M2 |
| Product Name | 600V 68A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW70N60M2 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 68A, 150Deg C, 450W; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 450000 milliwatts | 450000 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3 | TO-247; TO-247-3 |
