MOSFET N-CH 600V 66A TO247
Manufacturer: STMicroelectronics
Win Source Part Number: 1262390-STW70N60DM2
Series: MDmesh DM2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Family Name: STW70N60DM2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 121nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5508pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 446W (Tc)
Rds On (Maximum) @ Id, Vgs: 42 mOhm @ 33A, 10V
Alternative Parts (Cross-Reference): R6076ENZ1; IXKK85N60CSN; IXKK85N60C;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
N-Channel 600V 66A (Tc) 446W (Tc) Through Hole TO-247-3
MOSFET N-ch 600V 66A MDmesh DM2 TO-247
MOSFET N-ch 600V 66A MDmesh DM2 TO-247
MOSFET N-ch 600V 66A MDmesh DM2 TO-247
600V 66A 446W 42mΩ@10V,33A 5V@250uA N Channel TO-247-3 MOSFETs ROHS
MOSFET N-channel 600 V, 0.032 Ohm typ., 67 A MDmesh DM2 Power MOSFET in TO-247 package
N-channel 600 V, 37 mOhm typ., 6
MOSFET, N-CH, 600V, 66A, 150DEG C, 446W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:66A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STW70N60DM2 | 1262390-STW70N60DM2 | 497-16345-5-ND | 1116487 | 1116487P | STW70N60DM2 | STW70N60DM2 | STW70N60DM2 | 79Y9483 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW70N60DM2 | Single FETs, MOSFETs | MOSFETs | MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 66A, 150Deg C, 446W; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 600 volts | 600 volts | |||||||
| IDSS | 66000 milliamps | 66000 milliamps | |||||||
| PD | 446000 milliwatts | 446000 milliwatts |
