MOSFET N-CH 900V 6A TO247
Manufacturer: STMicroelectronics
Win Source Part Number: 898531-STW6N90K5
Series: MDmesh™ K5
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 900 V 6A (Tc) 110W (Tc) Through Hole TO-247
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: STW6N90
Categories: Discrete Semiconductor Products
Case / Package: TO-247
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Balance
Quantity per package: 30
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
N-Channel 900V 6A (Tc) 110W (Tc) Through Hole TO-247
MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package
MOSFET, N-CH, 900V, 6A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.91ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 900V 6A TO247
900V 6A 110W 1.1Ω@3A,10V 5V@100uA null TO-247-3 MOSFETs ROHS
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STW6N90K5 | 898531-STW6N90K5 | 497-17077-ND | STW6N90K5 | 14AC7566 | STW6N90K5 | STW6N90K5 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW6N90K5 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 900V, 6A, To-247-3; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 900 volts | 900 volts | |||||
| IDSS | 6000 milliamps | 6000 milliamps | |||||
| PD | 110000 milliwatts | 110000 milliwatts |