STMicroelectronics, Inc. Single FETs, MOSFETs STW6N120K3

Description
N-Channel 1200V 6A (Tc) 150W (Tc) Through Hole TO-247-3
Request a Quote Datasheet
Description
N-Channel 1200V 6A (Tc) 150W (Tc) Through Hole TO-247-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 497-12124-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12124-ND
Single FETs, MOSFETs 497-12124-ND
N-Channel 1200V 6A (Tc) 150W (Tc) Through Hole TO-247-3

N-Channel 1200V 6A (Tc) 150W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Single FETs, MOSFETs - STW6N120K3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW6N120K3
Single FETs, MOSFETs STW6N120K3
MOSFET N-CH 1200V 6A TO247

MOSFET N-CH 1200V 6A TO247

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW6N120K3 - 212442-STW6N120K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW6N120K3
212442-STW6N120K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW6N120K3 212442-STW6N120K3
Manufacturer: STMicroelectronics Win Source Part Number: 212442-STW6N120K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1050pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.4 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 30

Manufacturer: STMicroelectronics
Win Source Part Number: 212442-STW6N120K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1050pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 30

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW6N120K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW6N120K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW6N120K3
MOSFET N-CH 1200V 6A TO247

MOSFET N-CH 1200V 6A TO247

Supplier's Site

Technical Specifications

  DigiKey ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 497-12124-ND STW6N120K3 212442-STW6N120K3 STW6N120K3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW6N120K3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247-3 TO-247; SOT3; TO-247 TO-247; TO-247-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 1200 volts 1200 volts
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