STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW6N120K3 STW6N120K3

Description
Manufacturer: STMicroelectronics Win Source Part Number: 212442-STW6N120K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1050pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.4 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 30
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 212442-STW6N120K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1050pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.4 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 30
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW6N120K3 - 212442-STW6N120K3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW6N120K3
212442-STW6N120K3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW6N120K3 212442-STW6N120K3
Manufacturer: STMicroelectronics Win Source Part Number: 212442-STW6N120K3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V (1.2kV) Continuous Drain Current at 25°C: 6A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1050pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.4 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Quantity per package: 30

Manufacturer: STMicroelectronics
Win Source Part Number: 212442-STW6N120K3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 6A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1050pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.4 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Quantity per package: 30

Buy Now Datasheet
Single FETs, MOSFETs - 497-12124-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12124-ND
Single FETs, MOSFETs 497-12124-ND
N-Channel 1200V 6A (Tc) 150W (Tc) Through Hole TO-247-3

N-Channel 1200V 6A (Tc) 150W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Single FETs, MOSFETs - STW6N120K3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW6N120K3
Single FETs, MOSFETs STW6N120K3
MOSFET N-CH 1200V 6A TO247

MOSFET N-CH 1200V 6A TO247

Supplier's Site Datasheet
Singapore
1200V 6A 2.4 Ohm MOSFET Transistor
278-STW6N120K3
1200V 6A 2.4 Ohm MOSFET Transistor 278-STW6N120K3
1200V N-Ch MOSFET, 6A, 2.4 Ohm, TO-247 Product overview: STW6N120K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 6A, 2.4 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 6A, 2.4 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW6N120K3 can be used for catalog matching and distributor lookup.

1200V N-Ch MOSFET, 6A, 2.4 Ohm, TO-247 Product overview: STW6N120K3 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 6A, 2.4 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 6A, 2.4 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW6N120K3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW6N120K3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW6N120K3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW6N120K3
MOSFET N-CH 1200V 6A TO247

MOSFET N-CH 1200V 6A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 212442-STW6N120K3 497-12124-ND STW6N120K3 278-STW6N120K3 STW6N120K3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW6N120K3 Single FETs, MOSFETs Single FETs, MOSFETs 1200V 6A 2.4 Ohm MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 1200 volts 1200 volts
PD 150000 milliwatts 150000 milliwatts 150000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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