STMicroelectronics, Inc. Single FETs, MOSFETs STW65N65DM2AG

Description
MOSFET N-CH 650V 60A TO247
Request a Quote Datasheet
Description
MOSFET N-CH 650V 60A TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW65N65DM2AG - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW65N65DM2AG
Single FETs, MOSFETs STW65N65DM2AG
MOSFET N-CH 650V 60A TO247

MOSFET N-CH 650V 60A TO247

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-16127-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16127-5-ND
Single FETs, MOSFETs 497-16127-5-ND
N-Channel 650V 60A (Tc) 446W (Tc) Through Hole TO-247-3

N-Channel 650V 60A (Tc) 446W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW65N65DM2AG - 935688-STW65N65DM2AG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW65N65DM2AG
935688-STW65N65DM2AG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW65N65DM2AG 935688-STW65N65DM2AG
Manufacturer: STMicroelectronics Win Source Part Number: 935688-STW65N65DM2AG Series: Automotive, AEC-Q101, MDmesh™ DM2 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 650 V 60A (Tc) 446W (Tc) Through Hole TO-247-3 Package: TO-247-3 Package: Tube Mounting: Through Hole Family Name: STW65 Categories: Discrete Semiconductor Products Case / Package: TO-247-3 ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 91 pct. Supply and Demand Status: Balance Quantity per package: 30 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 37 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095

Manufacturer: STMicroelectronics
Win Source Part Number: 935688-STW65N65DM2AG
Series: Automotive, AEC-Q101, MDmesh™ DM2
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 60A (Tc) 446W (Tc) Through Hole TO-247-3
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: STW65
Categories: Discrete Semiconductor Products
Case / Package: TO-247-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Balance
Quantity per package: 30
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 37 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW65N65DM2AG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW65N65DM2AG
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW65N65DM2AG
MOSFET N-CH 650V 60A TO247

MOSFET N-CH 650V 60A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Automotive-grade N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package

MOSFET Automotive-grade N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STW65N65DM2AG 497-16127-5-ND 935688-STW65N65DM2AG STW65N65DM2AG STW65N65DM2AG
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW65N65DM2AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts
IDSS 60000 milliamps
PD 446000 milliwatts
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