N-Channel 650V 49A (Tc) 358W (Tc) Through Hole TO-247-4
Manufacturer: STMicroelectronics
Win Source Part Number: 1262379-STW56N65M2-4
Series: MDmesh M2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-247-4
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Family Name: STW56N65M2-4
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247-4L
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 93nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3900pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 358W (Tc)
Rds On (Maximum) @ Id, Vgs: 62 mOhm @ 24.5A, 10V
Alternative Parts (Cross-Reference): IPZ60R041P6FKSA1; IPZ60R070P6FKSA1; IPZ60R099P6FKSA1;
Introduction Date: December 15, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2033
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
MOSFET N-channel 650 V, 0.049 Ohm typ., 49 A MDmesh M2 Power MOSFET in a TO247-4 package
MOSFET N-CH 650V 49A TO247-4L
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 497-15373-5-ND | 1262379-STW56N65M2-4 | STW56N65M2-4 | STW56N65M2-4 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW56N65M2-4 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |