MOSFET N-CH 650V 48A TO247
N-Channel 650V 48A (Tc) 360W (Tc) Through Hole TO-247-3
Manufacturer: STMicroelectronics
Win Source Part Number: 1262378-STW56N65DM2
Series: MDmesh DM2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Family Name: STW56N65DM2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 88nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4100pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 360W (Tc)
Rds On (Maximum) @ Id, Vgs: 65 mOhm @ 24A, 10V
Alternative Parts (Cross-Reference): IPW65R065C7; SCT3060ALC11; IPW65R080CFDAXK;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFET N-channel 650 V, 0.052 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package
MOSFET N-CH 650V 48A TO247
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STW56N65DM2 | 497-16337-5-ND | 1262378-STW56N65DM2 | STW56N65DM2 | STW56N65DM2 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW56N65DM2 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 650 volts | ||||
| IDSS | 48000 milliamps |
