The STMicroelectronics N-channel MOSFET, part number STW56N60DM2, is designed for high voltage applications with a maximum drain-source voltage of 600V and a continuous drain current rating of 50A. It features a low on-resistance of 0.052 Oc, which enhances efficiency in power conversion applications. The device is housed in a TO-247 package and is suitable for demanding environments, with an operating junction temperature range of -55 to 150 ¬8C. This MOSFET includes a fast-recovery body diode, low gate charge, and input capacitance, making it ideal for use in high-efficiency converters, bridge topologies, and zero-voltage switching (ZVS) phase-shift converters. It has been 100% avalanche tested and exhibits high dv/dt ruggedness, ensuring reliable performance in various applications. The total power dissipation capability is rated at 360W, providing flexibility for different circuit designs.
MOSFET N-CH 600V 50A TO247
Manufacturer: STMicroelectronics
Win Source Part Number: 1262377-STW56N60DM2
Series: MDmesh DM2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Family Name: STW56N60DM2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4100pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 360W (Tc)
Rds On (Maximum) @ Id, Vgs: 60 mOhm @ 25A, 10V
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited
N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package Product overview: STW56N60DM2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.052 Ohm, 50 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.052 Ohm, 50 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW56N60DM2 can be used for catalog matching and distributor lookup.
N-Channel 600V 50A (Tc) 360W (Tc) Through Hole TO-247-3
MOSFET, N-CH, 600V, 50A, 150DEG C, 360W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package
MOSFET N-CH 600V 50A TO247
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STW56N60DM2 | 1262377-STW56N60DM2 | 278-STW56N60DM2 | 497-16341-5-ND | 79Y9481 | STW56N60DM2 | STW56N60DM2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW56N60DM2 | N-Channel 600 V 0.052 Ohm 50 A MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 50A, 150Deg C, 360W; Channel Type Stmicroelectronics | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | ||||||
| IDSS | 50000 milliamps | 50000 milliamps |
