Manufacturer: STMicroelectronics
Win Source Part Number: 047396-STW55NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 51A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 190nC @ 10V
Max Input Capacitance: 5800pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 60 mOhm @ 25.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 30
MOSFET N-CH 600V 51A TO247-3
N-Channel 600V 51A (Tc) 350W (Tc) Through Hole TO-247-3
MOSFET N-CH 600V 51A TO247-3
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 047396-STW55NM60ND | STW55NM60ND | 497-7036-5-ND | STW55NM60ND | STW55NM60ND |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW55NM60ND | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | 600 volts | |||
| PD | 350000 milliwatts | 350000 milliwatts | |||
| TJ | 150 C (302 F) | 150 C (302 F) |
