STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW55NM60ND STW55NM60ND

Manufacturer: STMicroelectronics
Win Source Part Number: 047396-STW55NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 51A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 190nC @ 10V
Max Input Capacitance: 5800pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 60 mOhm @ 25.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Quantity per package: 30

N-Channel 600V 51A (Tc) 350W (Tc) Through Hole TO-247-3

MOSFET N-CH 600V 51A TO247-3

600V 51A N-CH MOSFET TO-247 60mR FDmesh II Product overview: STW55NM60ND from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 51A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 51A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW55NM60ND can be used for catalog matching and distributor lookup.