MOSFET N-CH 600V 42A TO247
N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package Product overview: STW48N60M2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 60 mOhm, 42 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 60 mOhm, 42 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW48N60M2 can be used for catalog matching and distributor lookup.
N-Channel 600V 42A (Tc) 300W (Tc) Through Hole TO-247-3
Manufacturer: STMicroelectronics
Win Source Part Number: 042958-STW48N60M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: STW48N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 42A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 3060pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 70 mOhm @ 21A, 10V
Alternative Parts (Cross-Reference): IXTH34N65X2; IXKH47N60C3; IXFH34N65X2; MKH24I650HR;
Introduction Date: September 03, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2034
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 package
N-channel 600 V, 60 mOhm typ., 4
MOSFET, N-CH, 600V, 42A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | STW48N60M2 | 278-STW48N60M2 | 497-15250-5-ND | 042958-STW48N60M2 | STW48N60M2 | STW48N60M2 | 45AC7791 |
| Product Name | Single FETs, MOSFETs | N-Channel 600 V 60 mOhm 42 A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW48N60M2 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 42A, To-247; Channel Type Stmicroelectronics |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| IDSS | 42000 milliamps | 42000 milliamps |