Manufacturer: STMicroelectronics
Win Source Part Number: 042958-STW48N60M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: STW48N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 42A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 3060pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 70 mOhm @ 21A, 10V
Alternative Parts (Cross-Reference): IXTH34N65X2; IXKH47N60C3; IXFH34N65X2; MKH24I650HR;
Introduction Date: September 03, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2034
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited
N-Channel 600V 42A (Tc) 300W (Tc) Through Hole TO-247-3
MOSFET N-CH 600V 42A TO247
MOSFET, N-CH, 600V, 42A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
N-channel 600 V, 60 mOhm typ., 4
MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 package
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 042958-STW48N60M2 | 497-15250-5-ND | STW48N60M2 | 45AC7791 | STW48N60M2 | STW48N60M2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW48N60M2 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 42A, To-247; Channel Type Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | ||||
| PD | 300000 milliwatts | 300000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
