STMicroelectronics, Inc. Single FETs, MOSFETs STW48N60M2

Description
MOSFET N-CH 600V 42A TO247
Request a Quote Datasheet
Description
MOSFET N-CH 600V 42A TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW48N60M2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW48N60M2
Single FETs, MOSFETs STW48N60M2
MOSFET N-CH 600V 42A TO247

MOSFET N-CH 600V 42A TO247

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-15250-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-15250-5-ND
Single FETs, MOSFETs 497-15250-5-ND
N-Channel 600V 42A (Tc) 300W (Tc) Through Hole TO-247-3

N-Channel 600V 42A (Tc) 300W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW48N60M2 - 042958-STW48N60M2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW48N60M2
042958-STW48N60M2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW48N60M2 042958-STW48N60M2
Manufacturer: STMicroelectronics Win Source Part Number: 042958-STW48N60M2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Family Name: STW48N60M2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 42A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 3060pF @ 100V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 70 mOhm @ 21A, 10V Alternative Parts (Cross-Reference): IXTH34N65X2; IXKH47N60C3; IXFH34N65X2; MKH24I650HR; Introduction Date: September 03, 2014 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2034 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 042958-STW48N60M2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Family Name: STW48N60M2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 42A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 3060pF @ 100V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 70 mOhm @ 21A, 10V
Alternative Parts (Cross-Reference): IXTH34N65X2; IXKH47N60C3; IXFH34N65X2; MKH24I650HR;
Introduction Date: September 03, 2014
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2034
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 package

MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO-247 package

Buy Now Datasheet
Mosfet, N-Ch, 600V, 42A, To-247; Channel Type Stmicroelectronics - 45AC7791 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 42A, To-247; Channel Type Stmicroelectronics
45AC7791
Mosfet, N-Ch, 600V, 42A, To-247; Channel Type Stmicroelectronics 45AC7791
MOSFET, N-CH, 600V, 42A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 42A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW48N60M2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW48N60M2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW48N60M2
N-channel 600 V, 60 mOhm typ., 4

N-channel 600 V, 60 mOhm typ., 4

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number STW48N60M2 497-15250-5-ND 042958-STW48N60M2 STW48N60M2 45AC7791 STW48N60M2
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW48N60M2 MOSFET Mosfet, N-Ch, 600V, 42A, To-247; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts
IDSS 42000 milliamps 42000 milliamps
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