STMicroelectronics, Inc. Single FETs, MOSFETs STW48N60DM2

Description
MOSFET N-CH 600V 40A TO247
  • Single FETs, MOSFETs - STW48N60DM2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW48N60DM2 - 1262370-STW48N60DM2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 497-16360-5-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW48N60DM2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
MOSFET N-CH 600V 40A TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW48N60DM2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW48N60DM2
Single FETs, MOSFETs STW48N60DM2
MOSFET N-CH 600V 40A TO247

MOSFET N-CH 600V 40A TO247

Supplier's Site
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1116484P
MOSFETs 1116484P
MOSFET N-ch 600V 40A MDmesh DM2 TO-247

MOSFET N-ch 600V 40A MDmesh DM2 TO-247

Supplier's Site
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1116484
MOSFETs 1116484
MOSFET N-ch 600V 40A MDmesh DM2 TO-247

MOSFET N-ch 600V 40A MDmesh DM2 TO-247

Supplier's Site
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1685901
MOSFETs 1685901
MOSFET N-ch 600V 40A MDmesh DM2 TO-247

MOSFET N-ch 600V 40A MDmesh DM2 TO-247

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW48N60DM2 - 1262370-STW48N60DM2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW48N60DM2
1262370-STW48N60DM2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW48N60DM2 1262370-STW48N60DM2
Manufacturer: STMicroelectronics Win Source Part Number: 1262370-STW48N60DM2 Series: MDmesh DM2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 70nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3250pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 79 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): TK35N65W5,S1F; SPW52N50C3XK; IPW60R045CPA; Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1262370-STW48N60DM2
Series: MDmesh DM2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 70nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3250pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 79 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): TK35N65W5,S1F; SPW52N50C3XK; IPW60R045CPA;
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 497-16360-5-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16360-5-ND
Single FETs, MOSFETs 497-16360-5-ND
N-Channel 600V 40A (Tc) 300W (Tc) Through Hole TO-247-3

N-Channel 600V 40A (Tc) 300W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW48N60DM2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW48N60DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW48N60DM2
MOSFET N-CH 600V 40A TO247

MOSFET N-CH 600V 40A TO247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
STW48N60DM2
MOSFET STW48N60DM2
MOSFET N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

MOSFET N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) RS Components, Ltd. RS Components, Ltd. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STW48N60DM2 1116484P 1116484 1262370-STW48N60DM2 497-16360-5-ND STW48N60DM2 STW48N60DM2
Product Name Single FETs, MOSFETs MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW48N60DM2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts 600 volts 600 volts
IDSS 40000 milliamps 40000 milliamps 40000 milliamps
PD 300000 milliwatts
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