STMicroelectronics, Inc. Single FETs, MOSFETs STW45N65M5

Description
MOSFET N-CH 650V 35A TO247
Request a Quote Datasheet
Description
MOSFET N-CH 650V 35A TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW45N65M5 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW45N65M5
Single FETs, MOSFETs STW45N65M5
MOSFET N-CH 650V 35A TO247

MOSFET N-CH 650V 35A TO247

Supplier's Site Datasheet
Transistor - 88241384 - Radwell International
Willingboro, NJ, United States
Transistor
88241384
Transistor 88241384
MOSFET, N-CH, 650V, 35A, 150DEG C, 210W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:650V; CONTINUOUS DRAIN CURRENT ID:35A; ON RESISTANCE RDS(ON):0.067OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CH, 650V, 35A, 150DEG C, 210W; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:650V; CONTINUOUS DRAIN CURRENT ID:35A; ON RESISTANCE RDS(ON):0.067OHM; TRANSISTOR MOUNTING:THROUGH HOLE; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - 497-12938-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-12938-5-ND
Single FETs, MOSFETs 497-12938-5-ND
N-Channel 650V 35A (Tc) 210W (Tc) Through Hole TO-247-3

N-Channel 650V 35A (Tc) 210W (Tc) Through Hole TO-247-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW45N65M5 - 212436-STW45N65M5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW45N65M5
212436-STW45N65M5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW45N65M5 212436-STW45N65M5
Manufacturer: STMicroelectronics Win Source Part Number: 212436-STW45N65M5 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 210W (Tc) Family Name: STW45N65M5 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 91nC @ 10V Max Input Capacitance: 3375pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 78 mOhm @ 19.5A, 10V Alternative Parts (Cross-Reference): IPW65R110CFDA; IPW65R080CFDAXK; IPW65R110CFDAXK; IPW65R080CFDA; Introduction Date: February 22, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: STMicroelectronics
Win Source Part Number: 212436-STW45N65M5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 210W (Tc)
Family Name: STW45N65M5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 91nC @ 10V
Max Input Capacitance: 3375pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 78 mOhm @ 19.5A, 10V
Alternative Parts (Cross-Reference): IPW65R110CFDA; IPW65R080CFDAXK; IPW65R110CFDAXK; IPW65R080CFDA;
Introduction Date: February 22, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW45N65M5 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW45N65M5
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW45N65M5
MOSFET N-CH 650V 35A TO247

MOSFET N-CH 650V 35A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS

MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS

Buy Now Datasheet
Mosfet, N-Ch, 650V, 35A, 150Deg C, 210W; Channel Type Stmicroelectronics - 34AC1986 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 650V, 35A, 150Deg C, 210W; Channel Type Stmicroelectronics
34AC1986
Mosfet, N-Ch, 650V, 35A, 150Deg C, 210W; Channel Type Stmicroelectronics 34AC1986
MOSFET, N-CH, 650V, 35A, 150DEG C, 210W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:35A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, 650V, 35A, 150DEG C, 210W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:35A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Radwell International DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number STW45N65M5 88241384 497-12938-5-ND 212436-STW45N65M5 STW45N65M5 STW45N65M5 34AC1986
Product Name Single FETs, MOSFETs Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW45N65M5 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 650V, 35A, 150Deg C, 210W; Channel Type Stmicroelectronics
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts 650 volts
IDSS 35000 milliamps 35000 milliamps
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