Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package Product overview: STW45N60DM2AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 600 V, 0.085 Ohm, 34 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 600 V, 0.085 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW45N60DM2AG can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 34A TO247
N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247-3
Win Source Part Number: 1012660-STW45N60DM2A
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, MDmesh™ DM2
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16132-5
Base Product Number: STW45
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package
MOSFET N-CH 600V 34A TO247
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-STW45N60DM2AG | STW45N60DM2AG | 497-16132-5-ND | 1012660-STW45N60DM2AG | STW45N60DM2AG | STW45N60DM2AG |
| Product Name | Automotive N-Channel 600 V 0.085 Ohm MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 600 volts | |||||
| IDSS | 34000 milliamps | |||||
| PD | 250000 milliwatts | 250000 milliwatts |