Manufacturer: STMicroelectronics
Win Source Part Number: 810414-STW43N60DM2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 250W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 93mOhm at 17A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 56nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2500pF at 100V
Current - Continuous Drain (Id) at 25°C: 34A (Tc)
Vgs(th) (Maximum) at Id: 5V at 250μA
Part Number Series: STW43N
Maximum Vgs: ±25V
N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247-3
N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package Product overview: STW43N60DM2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.085 Ohm, 34 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.085 Ohm, 34 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW43N60DM2 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 34A TO247
MOSFET N-CH 600V 34A TO247
MOSFET N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-247 package
MOSFET, N-CH, 600V, 34A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 810414-STW43N60DM2 | 497-16343-5-ND | 278-STW43N60DM2 | STW43N60DM2 | STW43N60DM2 | STW43N60DM2 | 79Y9479 |
| Product Name | FETs - Single - STW43N60DM2 | Single FETs, MOSFETs | N-Channel 600 V 0.085 Ohm 34 A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 34A, To-247; Transistor Polarity Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 250000 milliwatts | 250000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 | ||
| Packing Method | Tube; Tube | Tube; Tube |
