Win Source Part Number: 1036416-STW42N60M2-E
Category: Discrete Semiconductor Products>Transistors
Series: MDmesh™ M2-EP
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): STW48N60M2; STWA48N60M2; FCH104N60F; STW36NM60ND; FCH099N60E; FCH104N60STW42N60M2E
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-15883-5,-1138-ST
Base Product Number: STW42
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247-3
MOSFET N-CH 600V 34A TO247
N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package Product overview: STW42N60M2-EP from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.076 Ohm, 34 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.076 Ohm, 34 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW42N60M2-EP can be used for catalog matching and distributor lookup.
MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package
MOSFET N-CH 600V 34A TO247
MOSFET, N-CH, 600V, 34A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1036416-STW42N60M2-EP | 497-STW42N60M2-EP-ND | STW42N60M2-EP | 278-STW42N60M2-EP | STW42N60M2-EP | STW42N60M2-EP | 45AC7790 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 600 V 0.076 Ohm 34 A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 34A, To-247; Channel Type Stmicroelectronics |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 250000 milliwatts | 250000 milliwatts | |||||
| TJ | 150 C (302 F) | 150 C (302 F) | |||||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-247; TO-247-3 | TO-3; TO-247 |