STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STW42N60M2-EP

Description
Win Source Part Number: 1036416-STW42N60M2-E P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2-EP Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): STW48N60M2; STWA48N60M2; FCH104N60F; STW36NM60ND; FCH099N60E; FCH104N60STW42N60M2E P; ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-15883-5,-1138-ST W42N60M2-EP,497-1588 3-5-ND,497-STW42N60M 2-EP Base Product Number: STW42 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1036416-STW42N60M2-E P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2-EP Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): STW48N60M2; STWA48N60M2; FCH104N60F; STW36NM60ND; FCH099N60E; FCH104N60STW42N60M2E P; ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-15883-5,-1138-ST W42N60M2-EP,497-1588 3-5-ND,497-STW42N60M 2-EP Base Product Number: STW42 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1036416-STW42N60M2-EP - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1036416-STW42N60M2-EP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1036416-STW42N60M2-EP
Win Source Part Number: 1036416-STW42N60M2-E P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ M2-EP Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): STW48N60M2; STWA48N60M2; FCH104N60F; STW36NM60ND; FCH099N60E; FCH104N60STW42N60M2E P; ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-15883-5,-1138-ST W42N60M2-EP,497-1588 3-5-ND,497-STW42N60M 2-EP Base Product Number: STW42 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1036416-STW42N60M2-EP
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ M2-EP
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): STW48N60M2; STWA48N60M2; FCH104N60F; STW36NM60ND; FCH099N60E; FCH104N60STW42N60M2EP;
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-15883-5,-1138-STW42N60M2-EP,497-15883-5-ND,497-STW42N60M2-EP
Base Product Number: STW42
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - STW42N60M2-EP - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW42N60M2-EP
Single FETs, MOSFETs STW42N60M2-EP
MOSFET N-CH 600V 34A TO247

MOSFET N-CH 600V 34A TO247

Supplier's Site
Single FETs, MOSFETs - 497-STW42N60M2-EP-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STW42N60M2-EP-ND
Single FETs, MOSFETs 497-STW42N60M2-EP-ND
N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247-3

N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package

MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a TO-247 package

Buy Now Datasheet
Mosfet, N-Ch, 600V, 34A, To-247; Channel Type Stmicroelectronics - 45AC7790 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 34A, To-247; Channel Type Stmicroelectronics
45AC7790
Mosfet, N-Ch, 600V, 34A, To-247; Channel Type Stmicroelectronics 45AC7790
MOSFET, N-CH, 600V, 34A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 600V, 34A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:34A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW42N60M2-EP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW42N60M2-EP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW42N60M2-EP
MOSFET N-CH 600V 34A TO247

MOSFET N-CH 600V 34A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1036416-STW42N60M2-EP STW42N60M2-EP 497-STW42N60M2-EP-ND STW42N60M2-EP 45AC7790 STW42N60M2-EP
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 34A, To-247; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 250000 milliwatts 250000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
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