STMicroelectronics, Inc. Single FETs, MOSFETs STW37N60DM2AG

N-Channel 600V 28A (Tc) 210W (Tc) Through Hole TO-247-3

Automotive-grade N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFET in a TO-247 package Product overview: STW37N60DM2AG from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, N-Channel, 600 V, 0.094 Ohm, 28 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Automotive, 600 V, 0.094 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW37N60DM2AG can be used for catalog matching and distributor lookup.

Win Source Part Number: 1182642-STW37N60DM2AG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, MDmesh™ DM2
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 210W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-16103-5,-497-16103-5
Base Product Number: STW37
Drive Voltage (Max Rds On, Min Rds On): 10V