STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STW36NM60ND

Description
Win Source Part Number: 1097346-STW36NM60ND Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, FDmesh™ II Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 190W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): FCH150N65F-F155; STW40N60M2; STWA45N65M5; SIHG33N60E-GE3; SIHG33N60EF-GE3; FCH099N60E; SIHW33N60E-GE3; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13888-5,-497-138 88-5 Base Product Number: STW36 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1097346-STW36NM60ND Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, FDmesh™ II Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 190W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): FCH150N65F-F155; STW40N60M2; STWA45N65M5; SIHG33N60E-GE3; SIHG33N60EF-GE3; FCH099N60E; SIHW33N60E-GE3; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13888-5,-497-138 88-5 Base Product Number: STW36 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1097346-STW36NM60ND - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1097346-STW36NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1097346-STW36NM60ND
Win Source Part Number: 1097346-STW36NM60ND Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, FDmesh™ II Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 190W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): FCH150N65F-F155; STW40N60M2; STWA45N65M5; SIHG33N60E-GE3; SIHG33N60EF-GE3; FCH099N60E; SIHW33N60E-GE3; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13888-5,-497-138 88-5 Base Product Number: STW36 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1097346-STW36NM60ND
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, FDmesh™ II
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): FCH150N65F-F155; STW40N60M2; STWA45N65M5; SIHG33N60E-GE3; SIHG33N60EF-GE3; FCH099N60E; SIHW33N60E-GE3;
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-13888-5,-497-13888-5
Base Product Number: STW36
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - STW36NM60ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW36NM60ND
Single FETs, MOSFETs STW36NM60ND
MOSFET N-CH 600V 29A TO247

MOSFET N-CH 600V 29A TO247

Supplier's Site
Single FETs, MOSFETs - 497-13888-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13888-5-ND
Single FETs, MOSFETs 497-13888-5-ND
N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-247-3

N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET Auto-grade N-CH 600V 0.097Ohm typ 29A

MOSFET Auto-grade N-CH 600V 0.097Ohm typ 29A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW36NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW36NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW36NM60ND
MOSFET N-CH 600V 29A TO247

MOSFET N-CH 600V 29A TO247

Supplier's Site
Mosfet, N-Ch, Aec-Q101, 600V, 29A, To-247; Channel Type Stmicroelectronics - 45AC7788 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, Aec-Q101, 600V, 29A, To-247; Channel Type Stmicroelectronics
45AC7788
Mosfet, N-Ch, Aec-Q101, 600V, 29A, To-247; Channel Type Stmicroelectronics 45AC7788
MOSFET, N-CH, AEC-Q101, 600V, 29A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, AEC-Q101, 600V, 29A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1097346-STW36NM60ND STW36NM60ND 497-13888-5-ND STW36NM60ND STW36NM60ND 45AC7788
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, Aec-Q101, 600V, 29A, To-247; Channel Type Stmicroelectronics
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 190000 milliwatts 190000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247
Transistor Technology / Material MOSFET (Metal Oxide)
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