STMicroelectronics, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single STW36NM60ND

Description
Win Source Part Number: 1097346-STW36NM60ND Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, FDmesh™ II Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 190W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): FCH150N65F-F155; STW40N60M2; STWA45N65M5; SIHG33N60E-GE3; SIHG33N60EF-GE3; FCH099N60E; SIHW33N60E-GE3; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13888-5,-497-138 88-5 Base Product Number: STW36 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1097346-STW36NM60ND Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, FDmesh™ II Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 190W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): FCH150N65F-F155; STW40N60M2; STWA45N65M5; SIHG33N60E-GE3; SIHG33N60EF-GE3; FCH099N60E; SIHW33N60E-GE3; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13888-5,-497-138 88-5 Base Product Number: STW36 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1097346-STW36NM60ND - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1097346-STW36NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1097346-STW36NM60ND
Win Source Part Number: 1097346-STW36NM60ND Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Automotive, AEC-Q101, FDmesh™ II Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 190W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V Vgs (Max): ±25V Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): FCH150N65F-F155; STW40N60M2; STWA45N65M5; SIHG33N60E-GE3; SIHG33N60EF-GE3; FCH099N60E; SIHW33N60E-GE3; ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Other Names: 497-13888-5,-497-138 88-5 Base Product Number: STW36 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1097346-STW36NM60ND
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101, FDmesh™ II
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Vgs (Max): ±25V
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): FCH150N65F-F155; STW40N60M2; STWA45N65M5; SIHG33N60E-GE3; SIHG33N60EF-GE3; FCH099N60E; SIHW33N60E-GE3;
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Other Names: 497-13888-5,-497-13888-5
Base Product Number: STW36
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - STW36NM60ND - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW36NM60ND
Single FETs, MOSFETs STW36NM60ND
MOSFET N-CH 600V 29A TO247

MOSFET N-CH 600V 29A TO247

Supplier's Site
Single FETs, MOSFETs - 497-13888-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-13888-5-ND
Single FETs, MOSFETs 497-13888-5-ND
N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-247-3

N-Channel 600V 29A (Tc) 190W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Mosfet, N-Ch, Aec-Q101, 600V, 29A, To-247; Channel Type Stmicroelectronics - 45AC7788 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, Aec-Q101, 600V, 29A, To-247; Channel Type Stmicroelectronics
45AC7788
Mosfet, N-Ch, Aec-Q101, 600V, 29A, To-247; Channel Type Stmicroelectronics 45AC7788
MOSFET, N-CH, AEC-Q101, 600V, 29A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N-CH, AEC-Q101, 600V, 29A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW36NM60ND - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW36NM60ND
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW36NM60ND
MOSFET N-CH 600V 29A TO247

MOSFET N-CH 600V 29A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Auto-grade N-CH 600V 0.097Ohm typ 29A

MOSFET Auto-grade N-CH 600V 0.097Ohm typ 29A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1097346-STW36NM60ND STW36NM60ND 497-13888-5-ND 45AC7788 STW36NM60ND STW36NM60ND
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, Aec-Q101, 600V, 29A, To-247; Channel Type Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
PD 190000 milliwatts 190000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
Transistor Technology / Material MOSFET (Metal Oxide)
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