STMicroelectronics, Inc. Single FETs, MOSFETs STW35N65DM2

Description
MOSFET N-CH 650V 32A TO247
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Description
MOSFET N-CH 650V 32A TO247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - STW35N65DM2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW35N65DM2
Single FETs, MOSFETs STW35N65DM2
MOSFET N-CH 650V 32A TO247

MOSFET N-CH 650V 32A TO247

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 998697-STW35N65DM2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
998697-STW35N65DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 998697-STW35N65DM2
Win Source Part Number: 998697-STW35N65DM2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: MDmesh™ DM2 Package: Tube Standard Package: 600 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 250W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V Vgs (Max): ±25V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: STMicroelectronics Base Product Number: STW35 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 998697-STW35N65DM2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: MDmesh™ DM2
Package: Tube
Standard Package: 600
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Gate Charge (Qg) (Max) @ Vgs: 56.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
Vgs (Max): ±25V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: STMicroelectronics
Base Product Number: STW35
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Singapore
N-Channel 650 V 0.093 Ohm 32 A MOSFET Transistor
278-STW35N65DM2
N-Channel 650 V 0.093 Ohm 32 A MOSFET Transistor 278-STW35N65DM2
N-channel 650 V, 0.093 Ohm typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package Product overview: STW35N65DM2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.093 Ohm, 32 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.093 Ohm, 32 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW35N65DM2 can be used for catalog matching and distributor lookup.

N-channel 650 V, 0.093 Ohm typ., 32 A MDmesh DM2 Power MOSFET in a TO-247 package Product overview: STW35N65DM2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 650 V, 0.093 Ohm, 32 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650 V, 0.093 Ohm, 32 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW35N65DM2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 497-STW35N65DM2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-STW35N65DM2-ND
Single FETs, MOSFETs 497-STW35N65DM2-ND
N-Channel 650V 32A (Tc) 250W (Tc) Through Hole TO-247-3

N-Channel 650V 32A (Tc) 250W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW35N65DM2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW35N65DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW35N65DM2
MOSFET N-CH 650V 32A TO247

MOSFET N-CH 650V 32A TO247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET

MOSFET

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Technical Specifications

  ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number STW35N65DM2 998697-STW35N65DM2 278-STW35N65DM2 497-STW35N65DM2-ND STW35N65DM2 STW35N65DM2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single N-Channel 650 V 0.093 Ohm 32 A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 650 volts
IDSS 32000 milliamps
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