MOSFET N-CH 600V 28A TO247
Manufacturer: STMicroelectronics
Win Source Part Number: 806232-STW35N60DM2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600V
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 210W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 110mOhm at 14A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 54nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2400pF at 100V
Current - Continuous Drain (Id) at 25°C: 28A (Tc)
Vgs(th) (Maximum) at Id: 5V at 250μA
Part Number Series: STW35N
Maximum Vgs: ±25V
N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package Product overview: STW35N60DM2 from STMicroelectronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600 V, 0.094 Ohm, 28 A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600 V, 0.094 Ohm, 28 A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-STW35N60DM2 can be used for catalog matching and distributor lookup.
N-Channel 600V 28A (Tc) 210W (Tc) Through Hole TO-247-3
MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
MOSFET, N-CH, 600V, 28A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.094ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 600V 28A TO247
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | STW35N60DM2 | 806232-STW35N60DM2 | 278-STW35N60DM2 | 497-STW35N60DM2-ND | STW35N60DM2 | 79Y9478 | STW35N60DM2 |
| Product Name | Single FETs, MOSFETs | FETs - Single - STW35N60DM2 | N-Channel 600 V 0.094 Ohm 28 A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 28A, To-247; Transistor Polarity Stmicroelectronics | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | ||||||
| IDSS | 28000 milliamps | 28000 milliamps | |||||
| PD | 210000 milliwatts | 210000 milliwatts |
