STMicroelectronics, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW33N60DM2 STW33N60DM2

Description
Manufacturer: STMicroelectronics Win Source Part Number: 1262359-STW33N60DM2 Series: MDmesh DM2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Family Name: STW33N60DM2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1870pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 130 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): SPW32N50C3X; SPW32N50C3XK; SPW32N50C3; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
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Description
Manufacturer: STMicroelectronics Win Source Part Number: 1262359-STW33N60DM2 Series: MDmesh DM2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Family Name: STW33N60DM2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1870pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 130 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): SPW32N50C3X; SPW32N50C3XK; SPW32N50C3; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW33N60DM2 - 1262359-STW33N60DM2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW33N60DM2
1262359-STW33N60DM2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW33N60DM2 1262359-STW33N60DM2
Manufacturer: STMicroelectronics Win Source Part Number: 1262359-STW33N60DM2 Series: MDmesh DM2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Family Name: STW33N60DM2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.st.com Manufacturer Package: TO-247 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1870pF @ 100V Vgs (Maximum): ±25V Power Dissipation (Maximum): 190W (Tc) Rds On (Maximum) @ Id, Vgs: 130 mOhm @ 12A, 10V Alternative Parts (Cross-Reference): SPW32N50C3X; SPW32N50C3XK; SPW32N50C3; ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: STMicroelectronics
Win Source Part Number: 1262359-STW33N60DM2
Series: MDmesh DM2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Family Name: STW33N60DM2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.st.com
Manufacturer Package: TO-247
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1870pF @ 100V
Vgs (Maximum): ±25V
Power Dissipation (Maximum): 190W (Tc)
Rds On (Maximum) @ Id, Vgs: 130 mOhm @ 12A, 10V
Alternative Parts (Cross-Reference): SPW32N50C3X; SPW32N50C3XK; SPW32N50C3;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - STW33N60DM2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
STW33N60DM2
Single FETs, MOSFETs STW33N60DM2
MOSFET N-CH 600V 24A TO247

MOSFET N-CH 600V 24A TO247

Supplier's Site
Single FETs, MOSFETs - 497-16353-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
497-16353-5-ND
Single FETs, MOSFETs 497-16353-5-ND
N-Channel 600V 24A (Tc) 190W (Tc) Through Hole TO-247-3

N-Channel 600V 24A (Tc) 190W (Tc) Through Hole TO-247-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package

MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package

Buy Now Datasheet
Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity Stmicroelectronics - 79Y9477 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity Stmicroelectronics
79Y9477
Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity Stmicroelectronics 79Y9477
MOSFET, N-CH, 600V, 24A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 600V, 24A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.11ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - STW33N60DM2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
STW33N60DM2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs STW33N60DM2
MOSFET N-CH 600V 24A TO247

MOSFET N-CH 600V 24A TO247

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1262359-STW33N60DM2 STW33N60DM2 497-16353-5-ND STW33N60DM2 79Y9477 STW33N60DM2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW33N60DM2 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 600V, 24A, To-247; Transistor Polarity Stmicroelectronics Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type TO-247; SOT3 TO-247; TO-247-3 TO-247; TO-247-3 TO-3; TO-247 TO-247; TO-247-3
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
IDSS 24000 milliamps 24000 milliamps
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