MOSFET N-CH 600V 25A TO247-3
Manufacturer: STMicroelectronics
Win Source Part Number: 212434-STW30NM60ND
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 190W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 2800pF @ 50V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 130 mOhm @ 12.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
N-Channel 600V 25A (Tc) 190W (Tc) Through Hole TO-247-3
MOSFET N-CH 600V 25A TO247-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | STW30NM60ND | 212434-STW30NM60ND | 497-8458-5-ND | STW30NM60ND |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - STW30NM60ND | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 600 volts | 600 volts | ||
| IDSS | 25000 milliamps |
